參數(shù)資料
型號(hào)： STGB3NB60HDT4
英文描述： Transient Surge Protection Thyristor; Package/Case:DO-214AA; Current, It av:2.2A; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Capacitance:45pF; Current Rating:2.2A; Forward Current:5A
中文描述： N溝道3A條- 600V的IGBT的TO-220/TO-220FP/D2PAK POWERMESH
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 585K
代理商： STGB3NB60HDT4
1/12
September 2003
STGP3NB60HD - STGP3NB60HDFP
STGB3NB60HD
N-CHANNEL 3A - 600V
- TO-220/TO-220FP/D
2
PAK
PowerMESH IGBT
I
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
I
LOW GATE CHARGE
I
HIGH FREQUENCY OPERATION
I
HIGH CURRENT CAPABILITY
I
OFF LOSSES INCLUDE TAIL CURRENT
I
CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE
TYPE
V
CES
V
CE(sat) (Max)
@25°C
I
C
(#)
@100°C
STGB3NB60HD
STGP3NB60HD
STGP3NB60HDFP
600 V
600 V
600 V
< 2.8
V
< 2.8
V
< 2.8
V
6 A
6 A
6 A
MARKING
PACKAGE
PACKAGING
STGB3NB60HDT4
GB3NB60HD
D
2
PAK
TAPE & REEL
STGP3NB60HD
GP3NB60HD
TO-220
TUBE
STGP3NB60HDFP
GP3NB60HDFP
TO-220FP
TUBE
D
2
PAK
1
3
1
2
3
1
2
3
TO-220FP
TO-220
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STGB3NB60MD N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT
STGB3NB60MDT4 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:6V; Capacitance:100pF; Holding Current:50mA
STGP3NB60MD N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT
STGP7NB60MD N-CHANNEL 7A - 600V TO-220/D2PAK POWERMESH IGBT
STGB7NB60MDT4 N-CHANNEL 7A - 600V TO-220/D2PAK POWERMESH IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGB3NB60K 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT
STGB3NB60KD 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT
STGB3NB60KDT4 功能描述:IGBT 晶體管 N-Ch 600 Volt 6 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB3NB60MD 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT
STGB3NB60MDT4 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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