參數(shù)資料
型號： STGB10NB37LZ
廠商： 意法半導(dǎo)體
英文描述： N-Channel Clamped 10A-D2PAK Internally Clamped PowerMESHTM IGBT(N溝道絕緣柵雙極晶體管)
中文描述： N通道鉗位10A條，采用D2PAK內(nèi)部鉗位PowerMESHTM IGBT的（不適用溝道絕緣柵雙極晶體管）
文件頁數(shù)： 1/8頁
文件大?。?/td> 98K
代理商： STGB10NB37LZ
STGB10NB37LZ
N-CHANNEL CLAMPED 10A - D
2
PAK
INTERNALLY CLAMPED PowerMESH
IGBT
I
POLYSILICONGATE VOLTAGEDRIVEN
I
LOW THRESHOLD VOLTAGE
I
LOW ON-VOLTAGEDROP
I
HIGH CURRENT CAPABILITY
I
HIGH VOLTAGECLAMPINGFEATURE
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWERPACKAGEIN TUBE(NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, SGS-Thomson has
designed an advanced family of IGBTs with
outstandingperformances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener suppliesan ESD protection.
APPLICATIONS
I
AUTOMOTIVE IGNITION
INTERNAL SCHEMATIC DIAGRAM
September 1998
1
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
V
ECR
V
GE
I
C
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
CLAMPED
V
18
V
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
CLAMPED
V
20
A
I
C
20
A
I
CM
(
)
P
tot
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
60
A
125
W
0.83
W/
o
C
E
SD
ESD (Human Body Model)
4
KV
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 175
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
TYPE
V
CES
V
CE(sat)
I
C
STGB10NB37LZ
CLAMPED
< 1.8 V
10 A
D
2
PAK
TO-263
1/8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGB10NB37LZ_01 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT
STGB10NB37LZT4 功能描述:IGBT 晶體管 10 A - 410 V Int Clamped IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB10NB40LZ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
STGB10NB40LZT4 功能描述:IGBT 晶體管 N-Ch Clamped 20 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB10NB60S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
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