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參數(shù)資料
| 型號： | STE40NK90ZD |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 900V - 0.14 - 40 A ISOTOP Super FREDMeshTM MOSFET |
| 中文描述： | N溝道900V - 0.14 - 40甲1000V的集電極MOSFET的超F(xiàn)REDMeshTM |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 278K |
| 代理商： | STE40NK90ZD |
STE40NK90ZD
2/10
Table 3: Absolute Maximum ratings
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
dv/dt (1)
Peak Diode Recovery voltage slope
V
ISO
Insulation Withstand Voltage (AC-RMS) from All Four
Terminals to External Heatsink
T
j
T
stg
Storage Temperature
( )
Pulse width limited by safe operating area
(1) I
SD
≤
40A, di/dt
≤
500 A/μs, V
DD
≤
V
(BR)DSS
.
Table 4: Thermal Data
Rthj-case
Rthj-amb
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 35 V)
Table 6: Gate-Source Zener Diode
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
900
V
900
V
± 30
V
40
A
25
A
160
A
600
W
5
W/°C
7
KV
8
V/ns
V
2500
Operating Junction Temperature
- 65 to 150
°C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.2
40
°C/W
°C/W
Parameter
Max. Value
40
Unit
A
1.2
J
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STE40NK90ZD_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 900V - 0.14ヘ - 40A ISOTOP Super FREDmesh⑩ MOSFET |
| STE4-420 | 制造商:Carlo Gavazzi 功能描述: |
| STE45N50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 45A I(D) |
| STE45NK80ZD | 功能描述:MOSFET N-Ch 800 Volt 45 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STE45NK80ZD_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800V - 0.11ヘ - 45A ISOTOP SuperFREDmesTM MOSFET |
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