參數(shù)資料
型號: STE38NB50
廠商: 意法半導(dǎo)體
英文描述: N-Channel 500V-0.11Ω-38A- ISOTOP PowerMESHTM MOSFET(N溝道MOSFET)
中文描述: N溝道500V -0.11Ω- 38A條,1000V的集電極PowerMESHTM MOSFET的(不適用溝道MOSFET的)
文件頁數(shù): 1/8頁
文件大?。?/td> 281K
代理商: STE38NB50
STE38NB50
N - CHANNEL 500V - 0.11
- 38A - ISOTOP
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.11
I
EXTREMELY HIGH dv/dt CAPABILITY
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
GATE CHARGE MINIMIZED
I
REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLY (SMPS)
I
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
500
V
500
±
30
38
V
V
A
I
D
24
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
152
A
400
W
3.2
W/
o
C
dv/dt
(1)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
38 A, di/dt
200 A/
μ
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
150
TYPE
V
DSS
R
DS(on)
< 0.13
I
D
STE38NB50
500 V
38 A
ISOTOP
1/8
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