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參數(shù)資料
| 型號： | STE26NA90 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 900V-0.25Ω-26A-ISOTOP Fast Power MOSFET(N溝道快速功率MOSFET) |
| 中文描述： | N溝道900V -0.25Ω- 26A條，1000V的集電極快速功率MOSFET（不適用溝道快速功率MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 92K |
| 代理商： | STE26NA90 |
STE26NA90
N - CHANNEL 900V - 0.25
- 26A - ISOTOP
FAST POWER MOSFET
I
TYPICAL R
DS(on)
= 0.25
I
±
30V GATE TO SOURCE VOLTAGERATING
I
100%AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
GATE CHARGE MINIMIZED
I
REDUCED VOLTAGESPREAD
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLY (SMPS)
I
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWERSUPPLY AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
October 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
900
V
900
V
±
30
26
V
A
I
D
16.2
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
104
A
450
W
3.6
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-55 to 150
T
j
Max. Operating Junction Temperature
150
V
ISO
Insulation Withstand Voltage (AC-RMS)
(
) Pulse width limited by safe operating area
2500
V
TYPE
V
DSS
R
DS(on)
< 0.3
I
D
STE26NA90
900 V
26 A
ISOTOP
1/8
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