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參數(shù)資料
| 型號(hào)： | STD90NH02L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 24V - 0.0052 ohm - 60A DPAK/IPAK STripFET⑩ III POWER MOSFET |
| 中文描述： | N溝道24V的- 0.0052歐姆-第60A條的DPAK /像是iPak STripFET⑩三功率MOSFET |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 510K |
| 代理商： | STD90NH02L |
3/12
STD90NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1)
Garanted when external Rg=4.7
and t
< t
.
(5)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2
) Value limited by wire bonding
(6)
Q
C
*
V
C
C
C
See Appendix A
(3)
Pulse width limited by safe operating area.
(7)
Gate charge for synchronous operation
(
4
) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 15V .
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 10 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 30 A
V
GS
= 10 V
13
75
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge Source
Gate Charge
Gate-Drain Charge
V
DD
= 10 V I
D
= 60 A V
GS
= 10 V
47.5
10
7
64
nC
nC
nC
Q
oss(6)
Output Charge
V
DS
= 16 V V
GS
= 0 V
18.8
nC
Q
gls(7)
Third-quadrant Gate Charge
V
DS
< 0 V V
GS
= 10 V
44
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 30 A
V
GS
= 10 V
50
18
24.3
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
V
SD
(5)
Forward On Voltage
I
SD
= 30 A V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A
V
DD
= 16 V
(see test circuit, Figure 5)
di/dt = 100A/μs
T
j
= 150°C
35
35
2
47
47
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
Thermal Impedance
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| STD90NH02L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 24V - 0.0052ohm - 60A - DPAK/IPAK STripFET TM Power MOSFET |
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