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參數(shù)資料
| 型號： | STD90NH02L-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 24V - 0.0052ohm - 60A - DPAK/IPAK STripFET TM Power MOSFET |
| 中文描述： | N溝道24V的- 0.0052ohm -第60A條-的DPAK /像是iPak STripFET商標(biāo)功率MOSFET |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 460K |
| 代理商： | STD90NH02L-1 |
Electrical characteristics
STD90NH02L- STD90NH02L-1
4/16
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 25mA, V
GS
=0
24
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 20V
V
DS
= 20V, T
C
= 125°C
1
10
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
1
1.8
2.5
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 30A
V
GS
= 5V, I
D
= 15A
0.0052
0.007
0.006
0.011
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Q
oss.
= C
oss
*
Vin, C
oss
= C
gd
+ C
gd.
See
Chapter 4: Appendix A
Gate charge for synchronous operation
Forward
transconductance
V
DS
= 10V, I
D
= 30A
40
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 15V, f = 1MHz,
V
GS
= 0
2850
800
120
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 10V, I
D
= 30A
R
G
= 4.7
V
GS
= 10V
(see
Figure 13
)
13
75
50
18
24.3
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Q
oss(2)
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 10V, I
D
= 60A,
V
GS
= 10V, R
G
= 4.7
(see
Figure 14
)
47.5
10
7
64
nC
nC
nC
2.
Output charge
V
DS
=16V, V
GS
=0V
18.8
nC
Q
gls(3)
3.
Third-quadrant gate
charge
V
DS
< 0V, V
GS
= 10V
44
nC
R
G
Gate input resistance
f=1MHz Gate DC
Bias =0 Test Signal
Level =20mV
Open Drain
1
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