參數(shù)資料
型號: STD30NE06
廠商: 意法半導(dǎo)體
英文描述: N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET
中文描述: ? -通道60V的- 0.025歐姆- 30A條-功率MOSFET的DPAK STripFET
文件頁數(shù): 8/10頁
文件大?。?/td> 474K
代理商: STD30NE06
STD30PF30L
8/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
0.031
L4
0.6
1
0.023
0.039
=
=
D
L2
L4
1
3
=
=
B
E
=
=
B
G
2
A
C
C
H
A
DETAIL "A"
A
DETAIL "A"
TO-252 (DPAK) MECHANICAL DATA
0068772-B
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參數(shù)描述
STD30NE06L 功能描述:MOSFET N-Ch 60 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD30NE06LT4 功能描述:MOSFET N-Ch 60 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD30NE06T4 功能描述:MOSFET N-CH 60V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD30NF03L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.020 ohm - 30A DPAK STripFET POWER MOSFET
STD30NF03L_07 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.020ohm - 30A - DPAK/IPAK STripFET TM II Power MOSFET