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參數(shù)資料
| 型號： | STD30NF06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道60V的- 0.020歐姆-第28A條像是iPak / DPAK封裝STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 474K |
| 代理商： | STD30NF06 |
1/10
May 2003
.
STD30PF30L
P-CHANNEL 30V - 0.025
- 24A IPAK/DPAK
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.025
I
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
I
LOW TRESHOLD DEVICE
I
LOW GATE CHARGE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This
MOSFET
STMicroelectronics unique “Single Feature Size” strip-
based process The resulting transistor shows extremely
high packing density for low on-resistance and low gate
charge.
is
the
latest
development
of
APPLICATIONS
I
DC-DC CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STD30PF30L
30 V
<0.028
24
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
Ordering Information
SALES TYPE
STD30PF03LT4
STD30PF03L-1
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D(#)
Drain Current (continuous) at T
C
= 25°C
I
D(#)
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(#) Current limited by wire bonding
(1) Starting T
j
= 25
o
C, I
D
=12 A, V
DD
= 15V
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
MARKING
D30PF30L
D30PF30L
PACKAGE
TO-252
TO-251
PACKAGING
TAPE & REEL
TUBE
Parameter
Value
30
30
± 16
24
24
96
70
0.47
850
Unit
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD35NF3LLT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-252AA |
| STD35NF06 | N-CHANNEL 60V - 0.018ohm - 35A DPAK STripFET⑩II MOSFET |
| STD38NH02L-1 | Cartridge Fuse; Current Rating:1.25A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P |
| STD3N25-1 | Cartridge Fuse; Current Rating:2.25A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P RoHS Compliant: Yes |
| STD3N25T4 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD30NF06-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 28A I(D) | TO-251AA |
| STD30NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET⑩ POWER MOSFET |
| STD30NF06L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-251AA |
| STD30NF06LT4 | 功能描述:MOSFET N-Ch 60 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD30NF06T4 | 功能描述:MOSFET N-channel 60 V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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