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參數(shù)資料
| 型號： | STD35NF06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 60V - 0.018ohm - 35A DPAK STripFET⑩II MOSFET |
| 中文描述： | N溝道60V的- 0.018ohm - 35A條的DPAK STripFET第二MOSFET的⑩ |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 93K |
| 代理商： | STD35NF06 |
1/10
February 2002
.
STD35NF3LL
STD35NF3LL-1
N-CHANNEL 30V - 0.014
- 35A IPAK/DPAK
STripFET
II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.016
@ 4.5V
I
OPTIMAL R
DS
(on) x Qg TRADE-OFF @ 4.5V
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DRIVE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION
This application specific Power MOSFET is the third
genaration of STMicroelectronis unique ”Single Feature
Size
” strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STD35NF3LL
STD35NF3LL-1
30 V
30 V
< 0.0195
< 0.0195
35 A
35 A
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25
°
C
I
D
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25
°
C
Derating Factor
E
AS(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limitedby safe operating area.
(1) Starting T
j
= 25
o
C, I
D
= 17.5 A, V
DD
= 24 V
Parameter
Value
30
30
±
16
35
25
140
50
0.33
300
Unit
V
V
V
A
A
A
W
W/
°
C
mJ
-55 to 175
°
C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD38NH02L-1 | Cartridge Fuse; Current Rating:1.25A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P |
| STD3N25-1 | Cartridge Fuse; Current Rating:2.25A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P RoHS Compliant: Yes |
| STD3N25T4 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-252AA |
| STD3N30-1 | Cartridge Fuse; Current Rating:375mA; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P |
| STD3N30L-1 | Cartridge Fuse; Current Rating:600mA; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 15 mm; Body Material:Glass; Diameter:4.5mm; Fuse Terminals:Ferrule; Leaded Process Compatible:Yes; Length:14.48mm; Series:229P RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD35NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET⑩II MOSFET |
| STD35NF06LT4 | 功能描述:MOSFET N-Ch 60 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD35NF06T4 | 功能描述:MOSFET N-Ch 60 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD35NF06T4 | 制造商:STMicroelectronics 功能描述:MOSFET |
| STD35NF3LL | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 30V 35A DPAK |
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