- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380762 > STD2NB60T4 (意法半導體) N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET PDF資料下載
參數(shù)資料
| 型號： | STD2NB60T4 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET |
| 中文描述： | N溝道600V的- 3.3OHM - 2.6A的電流的DPAK /像是iPak PowerMESHTM MOSFET的 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 228K |
| 代理商： | STD2NB60T4 |
3/11
STD2NB60/STD2NB60-1
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise specified)
Table 6. Off
Symbol
Table 7. On
(1)
Symbol
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Table 8. Dynamic
Symbol
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Table 9. Switching On
Symbol
Table 10. Switching Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
V
DS
= Max Rating
1
μ
A
Drain Current (V
GS
= 0)
V
DS
= Max Rating Tc = 125 °C
50
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 30 V
± 100
nA
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
; I
D
= 250
μ
A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V; I
D
= 1.6 A
3.3
3.6
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on)max
; I
D
= 1.6 A
1.2
2
S
C
iss
Input Capacitance
V
DS
= 25 V; f = 1 MHz; V
GS
= 0
400
520
pF
C
oss
Output Capacitance
57
77
pF
C
rss
Reverse Transfer
Capacitance
7
9
pF
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Time
V
DD
= 300 V; I
D
= 1.6 A; R
G
= 4.7
11
17
ns
tr
Rise Time
V
GS
= 10 V (see test circuit, Figure 16)
7
11
ns
Q
g
Total Gate Charge
V
DD
= 480 V; I
D
= 3.3 A; V
GS
= 10 V
15
22
nC
Q
gs
Gate-Source Charge
6.2
nC
Q
gd
Gate-Drain Charge
5.6
nC
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 480 V; I
D
= 3.3 A; R
G
= 4.7
11
16
ns
t
f
Fall Time
V
GS
= 10 V (see test circuit, Figure 18)
13
18
ns
t
c
Cross-over Time
18
25
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD30NE06L | N-Channel 60V-0.025Ω-30A-DPAK STripFETTM ” Power MOSFET(N溝道功率MOSFET) |
| STD30NF03LT | N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET |
| STD30NF03LTT4 | N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET |
| STD30NF03L | Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:100mohm; Operating Temp. Max:125 C RoHS Compliant: Yes |
| STD35NF06T4 | Progress in Power Switching(電源開關(guān)改進) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD2NB80 | 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NB80-1 | 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NB80T4 | 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NC40 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
| STD2NC40-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。