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參數(shù)資料
| 型號： | STD20NF20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 200V - 0.10ヘ -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET⑩ Power MOSFET |
| 中文描述： | N溝道200伏- 0.10ヘ- 18A條，DPAK/TO-220/TO-220FP低柵極電荷STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 493K |
| 代理商： | STD20NF20 |
Electrical characteristics
STD20NF20 - STF20NF20 - STP20NF20
4/16
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1 mA, V
GS
= 0
200
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125°C
1
10
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA
2
3
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 10 A
0.10
0.125
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
Forward
transconductance
V
DS
= 25 V
,
I
D
= 10 A
13
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
940
197
30
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
r
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 100 V, I
D
= 10 A,
R
G
= 4.7
V
GS
= 10 V
(see Figure 14)
15
30
40
10
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 160V, I
D
= 20 A,
V
GS
= 10V
(see Figure 15)
28
5.6
14.5
39
nC
nC
nC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD20NF20_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 200 V, 0.10 Ω, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET? Power MOSFET |
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