參數(shù)資料
型號: STD100NH02L-1
廠商: 意法半導(dǎo)體
英文描述: N-channel 24V - 0.0042ohm - 60A - DPAK - IPAK STripFET TM II Power MOSFET
中文描述: N溝道24V的- 0.0042ohm -第60A條-的DPAK -像是iPak STripFET商標(biāo)二功率MOSFET
文件頁數(shù): 3/16頁
文件大?。?/td> 455K
代理商: STD100NH02L-1
STD100NH02L
Electrical ratings
3/16
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
spike (1)
1.
Garanted when external Rg = 4.7
and t
f
< t
fmax
.
Value limited by wire bonding.
Drain-source voltage rating
30
V
V
DS
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20K
)
24
V
V
DGR
24
V
V
GS
I
D (2)
I
D (2)
I
DM (3)
Drain-source voltage
± 20
V
2.
Drain current (continuous) at T
C
= 25°C
60
A
Drain current (continuous) at T
C
=100°C
60
A
3.
Pulse width limited by safe operating area
Starting T
J
= 25
o
C, I
D
= 30A, V
DD
= 15V
Drain current (pulsed)
240
A
P
TOT
Total dissipation at T
C
= 25°C
100
W
Derating factor
0.67
W/°C
E
AS (4)
4.
Single pulse avalanche energy
800
mJ
T
stg
Storage temperature
-55 to 175
°C
T
J
Max. operating junction temperature
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
R
thJC
Thermal resistance junction-case Max
1.5
°C/W
R
thJA
Thermal resistance junction-ambient Max
100
°C/W
T
l
Maximum lead temperature for soldering
purpose
275
°C
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