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參數(shù)資料
| 型號： | STB60NF03L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET |
| 中文描述： | N溝道30V的- 0.008歐姆- 60A章功率MOSFET采用D2PAK STripFET |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | STB60NF03L |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 24 V I
D
= 60 A V
GS
= 5 V
I
D
= 30 A
V
GS
= 4.5 V
40
250
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
43
12
21
58
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, see fig. 3)
I
D
= 30 A
V
GS
= 4.5 V
60
70
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
60
240
A
A
V
SD
(
)
t
rr
I
SD
= 60 A
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 60 A
V
DD
= 15 V
(see test circuit, fig. 5)
di/dt = 100 A/
μ
s
T
j
= 150
o
C
75
100
2.6
ns
nC
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STB60NF03L
3/6
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