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參數(shù)資料
| 型號(hào)： | STB5610 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | GPS RF FRONT-END IC |
| 中文描述： | GPS射頻前端IC |
| 文件頁(yè)數(shù)： | 11/11頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | STB5610 |
11/11
STB5610
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| STB5610TR | 功能描述:射頻無(wú)線雜項(xiàng) GPS RF Front End RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
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| STB57N65M5 | 功能描述:MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB5BK50Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STB5N52K3 | 功能描述:MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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