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參數(shù)資料
| 型號： | STB190NF04-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 40V - 0.0039ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET |
| 中文描述： | N溝道40V的- 0.0039ohm - 120A條- D2PAK/I2PAK/TO-220 STripFET商標(biāo)第三功率MOSFET |
| 文件頁數(shù)： | 16/16頁 |
| 文件大?。?/td> | 491K |
| 代理商： | STB190NF04-1 |
STP190NF04 - STB190NF04 - STB190NF04-1
16/16
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB190NF04T4 | N-channel 40V - 0.0039ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET |
| STB19NF20 | N-channel 200V - 0.15ヘ - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY⑩ Power MOSFET |
| STP19NF20 | N-channel 200V - 0.15ヘ - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY⑩ Power MOSFET |
| STB20NK50Z | RESISTOR ARRAY |
| STW20NK50Z | N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB190NF04T4 | 功能描述:MOSFET N-Ch 40 Volt 190 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB19NB20 | 功能描述:MOSFET N-Ch 200 Volt 19 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB19NB20-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH⑩ MOSFET |
| STB19NF20 | 功能描述:MOSFET 200V 0.15Ohm 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB19NM65N | 功能描述:MOSFET N-Channel 650V 0.25 Ohms 15.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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