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參數(shù)資料
| 型號： | STB14NK50ZT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247齊納保護(hù)SuperMESH⑩功率MOSFET |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 673K |
| 代理商： | STB14NK50ZT4 |
STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z
2/14
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
14A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the 30V Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Parameter
Value
Unit
STP14NK50Z
STB14NK50Z/-1
STP14NK50ZFP
STW14NK50Z
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
500
V
500
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
14
14 (*)
14
A
7.6
7.6 (*)
7.6
A
48
48 (*)
48
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
150
35
150
W
1.20
0.28
1.20
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
-
V
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220
I
2
PAK
D
2
PAK
TO-220FP
TO-247
Rthj-case
Rthj-pcb
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max (#)
Thermal Resistance Junction-ambient Max
0.83
3.6
0.83
°C/W
°C/W
°C/W
°C
60
62.5
50
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
12
Unit
A
400
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB14NK60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET |
| STB14NK60Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET |
| STB14NK60Z-1 | 制造商:STMicroelectronics 功能描述:MOSFECT N-CHANNEL 600V - 0.45?￡[ - 13.5A |
| STB14NK60ZT4 | 功能描述:MOSFET N-Ch 600 Volt 13.5 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB14NM50N | 功能描述:MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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