- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄372331 > STB10NK60ZT4 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號(hào)： | STB10NK60ZT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 10A條（丁）|對(duì)263AB |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大?。?/td> | 255K |
| 代理商： | STB10NK60ZT4 |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)
1/16
April 2002
STP10NK60Z/FP, STB10NK60Z/-1
STH10NK60ZFI, STW10NK60Z
N-CHANNEL600V-0.65
-10ATO-220/FP/D
2
PAK/I
2
PAK/TO-247/ISOWATT218
Zener-Protected SuperMESH
Power MOSFET
I
TYPICAL R
DS
(on) = 0.65
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
I
VERY LOW INTRINSIC CAPACITANCES
I
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH
series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH
layout. In addition to pushing
on-resistance significantlydown, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh
products.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
I
LIGHTING
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
Pw
STB10NK60Z
STB10NK60Z-1
STH10NK60ZFI
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
600 V
600 V
600 V
600 V
600 V
600 V
< 0.75
< 0.75
< 0.75
< 0.75
< 0.75
< 0.75
10 A
10 A
10 A
10 A
10 A
10 A
115 W
115 W
35 W
115 W
35 W
156 W
MARKING
PACKAGE
PACKAGING
STP10NK60Z
P10NK60Z
TO-220
TUBE
STP10NK60ZFP
P10NK60ZFP
TO-220FP
TUBE
STB10NK60ZT4
B10NK60Z
D
2
PAK
TAPE & REEL
STB10NK60Z
B10NK60Z
D
2
PAK
TUBE
(ONLY UNDER REQUEST)
STB10NK60Z-1
B10NK60Z
I
2
PAK
TUBE
STH10NK60ZFI
H10NK60FI
ISOWATT218
TUBE
STW10NK60Z
W10NK60Z
TO-247
TUBE
TO-220
TO-220FP
123
I
2
PAK
1
2
3
1
3
D
2
PAK
1
2
3
TO-247
1
2
3
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STH10NA50 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STH10NA50FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STH10NC60 | N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET |
| STH10NC60FI | N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET |
| STH11020 | TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 15A I(C) | TO-218AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB1106 | 制造商:SUPERWORLD 制造商全稱:Superworld Electronics 功能描述:SHIELDED SMD POWER INDUCTORS |
| STB1106100MZF | 制造商:SUPERWORLD 制造商全稱:Superworld Electronics 功能描述:SHIELDED SMD POWER INDUCTORS |
| STB1106101MZF | 制造商:SUPERWORLD 制造商全稱:Superworld Electronics 功能描述:SHIELDED SMD POWER INDUCTORS |
| STB1106150MZF | 制造商:SUPERWORLD 制造商全稱:Superworld Electronics 功能描述:SHIELDED SMD POWER INDUCTORS |
| STB11061R2MZF | 制造商:SUPERWORLD 制造商全稱:Superworld Electronics 功能描述:SHIELDED SMD POWER INDUCTORS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。