- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381107 > STB100NF03L-03-01 (意法半導(dǎo)體) N-CHANNEL 30V - 0.0026 W -100A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | STB100NF03L-03-01 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 30V - 0.0026 W -100A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道30V的- 0.0026的W - 100號A?巴基斯坦/我PAK/TO-220 STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 393K |
| 代理商： | STB100NF03L-03-01 |
1/11
February 2003
.
STB100NF03L-03 STP100NF03L-03
STB100NF03L-03-1
N-CHANNEL 30V - 0.0026
-100A D2PAK/I2PAK/TO-220
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0026
I
LOW THRESHOLD DRIVE
I
100% AVALANCHE TESTED
I
LOGIC LEVEL DEVICE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
HIGH CURRENT, HIGH SWITCHING SPEED
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(1)
Drain Current (continuous) at T
C
= 25°C
I
D
(1)
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
TYPE
V
DSS
R
DS(on)
I
D
STB100NF03L-03
STP100NF03L-03
STB100NF03L-03-01
30 V
30 V
30 V
<0.0032
<0.0032
<0.0032
100 A
100 A
100 A
1
2
3
1
3
D
2
PAK
TO-263
(Suffix “T4”)
TO-220
123
I
2
PAK
TO-262
(Suffix “-1”)
(
)
Pulse width limited by safe operating area
(1) Current Limited by Package
(2) Starting T
j
= 25
o
C, I
AR
= 50A, V
DD
= 50V
Parameter
Value
30
30
± 16
100
100
400
300
2
1.9
Unit
V
V
V
A
A
A
W
W/°C
J
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB10NB20 | N-Channel 200V-0.30Ω-10A-D2PAK PowerMESH MOSFET(N溝道MOSFET) |
| STB11NB40 | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| STB11NM60N-1 | N-channel 600V - 0.37ヘ - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh⑩ Power MOSFET |
| STB12NM50FD | N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ Power MOSFET with FAST DIODE |
| STB12NM50 | N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ Power MOSFET with FAST DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB100NF03L-03-1 | 功能描述:MOSFET N-Ch 30 Volt 100 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB100NF03L-03T4 | 功能描述:MOSFET N-Ch 30 Volt 100 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB100NF04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET |
| STB100NF04_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET |
| STB100NF04-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。