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參數(shù)資料
| 型號(hào)： | STB10NB20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 200V-0.30Ω-10A-D2PAK PowerMESH MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道200伏-0.30Ω- 10A條，采用D2PAK PowerMESH MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 82K |
| 代理商： | STB10NB20 |
STB10NB20
N - CHANNEL 200V - 0.30
- 10A - D
2
PAK
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.30
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronis has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
November 1998
1
3
D
2
PAK
TO-263
(suffix ”T4”)
TYPE
V
DSS
200 V
R
DS(on)
< 0.40
I
D
STB10NB20
10 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
200
V
V
DGR
200
±
30
10
V
V
GS
I
D
I
D
I
DM
(
)
P
tot
V
A
6
A
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
40
A
85
W
0.68
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
5.5
V/ns
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
o
C
(
1
) I
SD
≤
10A,di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
1/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB10NB20T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-263AB |
| STB10NB50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 500V - 0.55ohm - 10.6A - D2PAK PowerMESH] MOSFET |
| STB10NB50T4 | 制造商:STMicroelectronics 功能描述: |
| STB10NC50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET |
| STB10NC50-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 500V - 0.48ohm - 10A - I2PAK/D2PAK PowerMESH] MOSFET |
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