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參數(shù)資料
| 型號(hào)： | STB11NB40 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式PowerMESHTM MOSFET的（不適用溝道增強(qiáng)模式MOSFET的） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | STB11NB40 |
STB11NB40
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.48
I
EXTREMELY HIGH dV/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
March 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
400
Unit
V
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
400
±
30
10.7
V
V
A
6.7
A
42.8
A
125
W
1.0
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
(
1
) I
SD
≤
11A,di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.55
I
D
STB11NB40
400 V
10.7 A
123
1
3
I
2
PAK
TO-262
(suffix ”-1”)
D
2
PAK
TO-263
(suffix ”T4”)
1/9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB11NB40-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET |
| STB11NB40T4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET |
| STB11NK40Z | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 400V 9A D2PAK |
| STB11NK40Z_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET |
| STB11NK40Z_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET |
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