參數(shù)資料
型號： STB11NM60N-1
廠商： 意法半導體
英文描述： N-channel 600V - 0.37ヘ - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh⑩ Power MOSFET
中文描述： N溝道600V的- 0.37ヘ- 10A條- TO-220/FP- I/I2PAK - DPAK封裝⑩第二代MDmesh功率MOSFET
文件頁數(shù)： 1/18頁
文件大小： 468K
代理商： STB11NM60N-1
October 2007
Rev 3
1/18
18
STD11NM60N-1 - STB11NM60N-1
STD11NM60N-STP11NM60N-STF11NM60N
N-channel 600V - 0.37
- 10A - TO-220/FP- I/I
2
PAK - DPAK
second generation MDmesh Power MOSFET
Features
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
Application
■
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
Figure 1.
Internal schematic diagram
Type
V
DSS
(@T
J
max)
R
DS(on)
I
D
STB11NM60N-1
650 V
< 0.45
< 0.45
< 0.45
< 0.45
< 0.45
10 A
STD11NM60N
650 V
10 A
STD11NM60N-1
650 V
10 A
10 A
(1)
STF11NM60N
650 V
1.
Limited only by maximum temperature allowed
STP11NM60N
650 V
10 A
TO-220
TO-220FP
DPAK
IPAK
1
2
3
1
2
3
1
3
3
2
1
123
I2PAK
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB11NM60N-1
B11NM60N
I2PAK
Tube
STD11NM60N-1
D11NM60N
IPAK
Tube
STD11NM60N
D11NM60N
DPAK
Tape & reel
STP11NM60N
P11NM60N
TO-220
Tube
STF11NM60N
F11NM60N
TO-220FP
Tube
www.st.com
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相關代理商/技術參數(shù)
參數(shù)描述
STB11NM60T4 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB11NM65N 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB11NM80 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET
STB11NM80_07 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800 V - 0.35 ヘ - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh⑩ Power MOSFET
STB11NM80T4 功能描述:MOSFET N-Ch 800 Volt 11 Amp Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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