參數(shù)資料
型號(hào)： STB12NM50T4
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET
中文描述： N溝道500V -為0.3W - 12A條TO-220/TO-220FP/I巴基斯坦的MDmesh]功率MOSFET
文件頁(yè)數(shù)： 1/14頁(yè)
文件大?。?/td> 649K
代理商： STB12NM50T4
1/14
June 2002
STP12NM50FD-STP12NM50FDFP-STW14NM50FD
STB12NM50FD - STB12NM50FD-1
N-CHANNEL500V-0.32
-12ATO-220/FP/D
2
PAK/I
2
PAK/TO-247
FDmesh Power MOSFET (with FAST DIODE)
I
TYPICAL R
DS
(on) = 0.32
I
HIGH dv/dt AND AVALANCHE CAPABILITIES
I
100% AVALANCHE TESTED
I
LOW INPUT CAPACITANCE AND GATE
CHARGE
I
LOW GATE INPUT RESISTANCE
I
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmesh
associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
APPLICATIONS
I
ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP12NM50FD
STP12NM50FDFP
STB12NM50FD
STB12NM50FD-1
STW14NM50FD
500 V
500 V
500 V
500 V
500 V
< 0.4
< 0.4
< 0.4
< 0.4
< 0.4
12 A
12 A
12 A
12 A
14 A
160 W
35 W
160 W
160 W
175 W
MARKING
PACKAGE
PACKAGING
STP12NM50FD
P12NM50FD
TO-220
TUBE
STP12NM50FDFP
P12NM50FDFP
TO-220FP
TUBE
STB12NM50FD
B12NM50FD
D
2
PAK
TUBE
STB12NM50FDT4
B12NM50FD
D
2
PAK
TAPE & REEL
STB12NM50FD-1
B12NM50FD
I
2
PAK
TUBE
STW14NM50FD
W14NM50FD
TO-247
TUBE
TO-220
TO-220FP
1
2
3
1
2
3
TO-247
123
1
3
I
2
PAK
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STB12NM50FD-1 N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ Power MOSFET with FAST DIODE
STP12NM50FDFP N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ Power MOSFET with FAST DIODE
STB12NM50N N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh⑩ Power MOSFET
STD12NM50N N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh⑩ Power MOSFET
STP12NM50N N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh⑩ Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB12NM60N 功能描述:MOSFET N ch 600V 0.005 Ohm 10A Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB12NM60N-1 功能描述:MOSFET N Ch 1500V 2.5A Hi Vltg Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB13005 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor
STB13005_07 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor
STB13005-1 功能描述:兩極晶體管 - BJT H/V FST SWCH PW TRNS NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*