參數(shù)資料
型號： STB12NM50N
廠商： 意法半導(dǎo)體
英文描述： N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh⑩ Power MOSFET
中文描述： N溝道500V - 0.29ヘ-第11A條-對220 /計(jì)劃生育，采用D2PAK - DPAK封裝⑩第二代MDmesh功率MOSFET
文件頁數(shù)： 1/18頁
文件大?。?/td> 485K
代理商： STB12NM50N
November 2006
Rev 7
1/18
18
STB12NM50N - STD12NM50N
STF12NM50N - STP12NM50N
N-channel 500V - 0.29
- 11A - TO-220 /FP- D
2
PAK - DPAK
Second generation MDmesh Power MOSFET
General features
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■
Switching application
Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
STB12NM50N
550V
<0.38
<0.38
<0.38
<0.38
11A
STD12NM50N
550V
11A
11A
(1)
STF12NM50N
550V
STP12NM50N
550V
11A
1
2
3
TO-220
DPAK
D2PAK
1
3
1
2
3
TO-220FP
1
3
www.st.com
Order codes
Part number
Marking
Package
Packaging
STB12NM50N
B12NM50N
D2PAK
Tape & reel
STD12NM50N
D12NM50N
DPAK
Tape & reel
STF12NM50N
F12NM50N
TO-220FP
Tube
STP12NM50N
P12NM50N
TO-220
Tube
相關(guān)PDF資料
PDF描述
STD12NM50N N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh⑩ Power MOSFET
STP12NM50N N-channel 500V - 0.29ヘ - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh⑩ Power MOSFET
STB13005-1 High Voltage Fast-Switching NPN Power Transistor(高壓快速開關(guān)NPN功率晶體管)
STB135N10 N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET
STP135N10 N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB12NM50N_08 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 500 V, 0.29 Ω, 11 A MDmesh? II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP
STB12NM50ND 功能描述:MOSFET N-channel 500 V 11 A Fdmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB12NM50ND_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
STB12NM50T4 功能描述:MOSFET N-Ch 500 Volt 12 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB12NM60N 功能描述:MOSFET N ch 600V 0.005 Ohm 10A Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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