參數(shù)資料
型號： STB135N10
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET
中文描述： N溝道100V的- 0.007歐姆- 135a條DPAK/TO-220低柵極電荷STripFET功率MOSFET
文件頁數(shù)： 1/8頁
文件大小： 204K
代理商： STB135N10
1/8
TARGET DATA
July 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
STB135N10
STP135N10
N-CHANNEL 100V - 0.007
- 135A D2PAK/TO-220
LOW GATE CHARGE STripFET POWER MOSFET
I
TYPICAL R
DS
(on) = 0.007
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This MOSFET is the result of STMicroelectronics’s well
established and consolidated STripFET technology utiliz-
ing the most recent layout optimization. The device exhib-
its extremely low on-resistance, gate charge and diode’s
reverse recovery charge Qrr making it the ideal switch in
a very large spectrum of applications such as Automotive,
Consumer, Telecom and Industrial.
APPLICATIONS
I
PRIMARY SWITCH IN TELECOM DC-DC
CONVERTER
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
42V AUTOMOTIVE APPLICATIONS
I
SYNCHRONOUS RECTIFICATION
I
DIESEL INJECTION
I
PWM UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D(*)
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM(1)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(2)
Peak Diode Recovery voltage slope
E
AS (3)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
TYPE
V
DSS
R
DS(on)
I
D
STB135N10
STP135N10
100 V
100 V
<0.009
<0.009
135 A
(*)
135 A
(*)
INTERNAL SCHEMATIC DIAGRAM
(1)
Pulse width limited by safe operating area.
(*)
Value limited by wire bonding
(2) I
≤
40A, di/dt
≤
600A/μs, V
≤
B
, T
j
≤
T
JMAX.
(3) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 50V
Parameter
Value
100
100
± 20
135
96
540
150
1
TBD
TBD
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
1
2
3
TO-220
1
3
D
2
PAK
TO-263
(Suffix “T4”)
相關(guān)PDF資料
PDF描述
STP135N10 N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET
STB140NF55T4 N-CHANNEL 55V - 0.0065 ohm - 80A TO-220/D2PAK STripFET II POWER MOSFET
STB140NF55 N-channel 55V - 0.0065ヘ - 80A - D2PAK - I2PAK - TO-220 STripFET⑩ II Power MOSFET
STB140NF55_07 N-channel 55V - 0.0065ヘ - 80A - D2PAK - I2PAK - TO-220 STripFET⑩ II Power MOSFET
STB140NF55-1 N-channel 55V - 0.0065ヘ - 80A - D2PAK - I2PAK - TO-220 STripFET⑩ II Power MOSFET
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