參數(shù)資料
型號(hào): STB140NF55T4
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 55V - 0.0065 ohm - 80A TO-220/D2PAK STripFET II POWER MOSFET
中文描述: N溝道55V的- 0.0065歐姆- 80A條TO-220/D2PAK STripFET二功率MOSFET
文件頁(yè)數(shù): 1/11頁(yè)
文件大?。?/td> 282K
代理商: STB140NF55T4
1/11
December 2004
STB140NF55
STP140NF55
N-CHANNEL 55V - 0.0065
- 80A TO-220/D2PAK
STripFET II POWER MOSFET
Figure 1:
Package
Table 1: General Features
TYPICAL R
DS
(on) = 0.0065
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
MOTOR CONTROL
HIGH CURRENT, SWITCHING
APPLICATIONS
AUTOMOTIVE ENVIRONMENT
TYPE
V
DSS
R
DS(on)
I
D
STB140NF55
STP140NF55
55 V
55 V
< 0.008
< 0.008
80 A
80 A
1
2
3
TO-220
1
3
D
2
PAK
TO-263
(Suffix “T4”)
Figure 2: Internal Schematic Diagram
Table 2:
Order Codes
Part Number
STB140NF55T4
STP140NF55
Table 3:
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I
SD
80A, di/dt
300A/μs, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 30V
MARKING
B140NF55
P140NF55
PACKAGE
D2PAK
TO-220
PACKAGING
TAPE & REEL
TUBE
Parameter
Value
55
± 20
80
80
320
300
2
10
1.3
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
Rev.
2
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