參數(shù)資料
型號(hào)： ST103S08PFN0
英文描述： IC SRAM 16KX16 SYNC DUAL 100TQFP
中文描述： 800V的165A逆變晶閘管采用TO - 209AC（到94）封裝
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 118K
代理商： ST103S08PFN0
www.irf.com
ST103S Series
Bulletin I25183 rev. B 03/94
3
V
TM
V
T(TO)1
Low level value of threshold
voltage
Max. peak on-state voltage
1.73
I
TM
= 300A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)2
High level value of threshold
voltage
r
t
1
slope resistance
Low level value of forward
r
t
2
High level value of forward
slope resistance
Maximum holding current
I
H
I
L
600
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6
,
I
G
= 1A
Typical latching current
1000
Parameter
ST103S
Units
Conditions
On-state Conduction
1.32
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
1.35
(I > x
π
x I
T(AV)
), T
J
= T
J
max.
V
1.40
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
1.30
(I > x
π
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
of turned-on current
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1μs
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 100A, commutating di/dt
= 10A/μs
V
R
= 50V, t
p
= 200μs, dv/dt: see table in device code
Switching
Parameter
ST103S
Units
Conditions
1000
A/μs
t
d
Typical delay time
0.80
Min
10
Max
25
dv/dt
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
T
= T
max., linear to 80% V
DRM
, higher value
available on request
I
RRM
I
DRM
Parameter
ST103S
Units
Conditions
Blocking
500
V/
μ
s
30
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
I
GM
Maximum peak gate power
40
Maximum average gate power
5
Max. peak positive gate current
5
A
T
J
= T
J
max, t
p
≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
Max DC gate current not to trigger
I
GD
V
GD
20
mA
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST103S
Units
Conditions
20
5
V
T
J
= T
J
max, t
p
≤
5ms
200
mA
3
V
T
J
= 25°C, V
A
= 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
t
q
Max. turn-off time
μs
W
T
J
= T
J
max, f = 50Hz, d% = 50
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ST103S08PFN0P 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Stud Version), 105 A
ST103S08PFN1 功能描述:SCR 800 Volt 105 Amp RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
ST103S08PFN1P 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Stud Version), 105 A
ST103S08PFN2 功能描述:SCR 105 Amp 800 Volt 165 Amp IT(RMS) RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
ST103SP 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Stud Version), 105 A
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