參數(shù)資料
型號: SST5460
廠商: Vishay Intertechnology,Inc.
英文描述: MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.2A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.024R; SMD:1; Charge, gate
中文描述: P溝道JFET的
文件頁數(shù): 5/5頁
文件大?。?/td> 50K
代理商: SST5460
2N/SST5460 Series
Vishay Siliconix
Document Number: 70262
S-04030
Rev. D, 04-Jun-01
www.vishay.com
9-5
0.01
0.1
1
100
80
0
60
40
20
A
I
D
Drain Current (mA)
Assume V
DD
=
15 V, V
DS
=
5 V
g
fs
R
L
1
R
L
g
os
V
GS(off)
= 1.5 V
Circuit Voltage Gain vs. Drain Current
10
0
4
8
12
16
20
8
6
4
2
0
5
0
4
8
12
16
20
0
V
GS
Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
C
5 V
15 V
f = 1 MHz
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
C
V
GS
Gate-Source Voltage (V)
5 V
15 V
f = 1 MHz
2.5
0.1
1
10
10
1
0.1
Common-Source Forward Transconductance
vs. Drain Current
I
D
Drain Current (mA)
T
A
=
55 C
125 C
10
100
1 k
100 k
10 k
100
10
1
0.1
1
10
20
16
0
12
8
4
Output Conductance vs. Drain Current
I
D
Drain Current (mA)
T
A
=
55 C
125 C
Equivalent Input Noise Voltage vs. Frequency
f
Frequency (Hz)
V
DS
=
15 V
I
D
=
0.1 mA
I
D
=
1 mA
25 C
V
=
15 V
f = 1 kHz
V
GS(off)
= 3 V
V
=
15 V
f = 1 kHz
V
GS(off)
= 3 V
V
GS(off)
= 3 V
25 C
A
V
R
L
10 V
I
D
g
f
μ
S
e
g
o
μ
S
相關(guān)PDF資料
PDF描述
SST5461 P-Channel JFETs
SST5462 P-Channel JFETs
SST5484 MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
SST5485 N-Channel JFETs
SST5486 MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
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參數(shù)描述
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