參數(shù)資料
型號: SST5460
廠商: Vishay Intertechnology,Inc.
英文描述: MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.2A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.024R; SMD:1; Charge, gate
中文描述: P溝道JFET的
文件頁數(shù): 4/5頁
文件大?。?/td> 50K
代理商: SST5460
2N/SST5460 Series
Vishay Siliconix
www.vishay.com
9-4
Document Number: 70262
S-04030
Rev. D, 04-Jun-01
5
0
0.4
0.8
1.2
1.6
2
4
3
2
1
0
Transfer Characteristics
T
A
=
55 C
125 C
I
V
GS
Gate-Source Voltage (V)
25 C
10
0
1
2
3
4
5
8
6
4
2
0
Transfer Characteristics
V
GS
Gate-Source Voltage (V)
T
A
=
55 C
125 C
I
25 C
0.1
1
10
1000
800
0
600
400
200
On-Resistance vs. Drain Current
I
D
Drain Current (mA)
T
A
= 25 C
V
GS(off)
= 1.5 V
3 V
4 V
10 nA
1 nA
0.1 pA
0
30
40
20
10
50
100 pA
10 p A
1 pA
Gate Leakage Current
V
DG
Drain-Gate Voltage (V)
I
I
GSS
@ 125 C
I
GSS
@ 25 C
T
A
= 125 C
T
A
= 25 C
5 mA
5 mA
5
0
0.4
0.8
1.2
1.6
2
4
3
2
1
0
Transconductance vs. Gate-Source Voltage
T
A
=
55 C
25 C
125 C
V
GS
Gate-Source Voltage (V)
5
0
1
2
3
4
5
4
3
2
1
0
Transconductance vs. Gate-Source Voltage
T
A
=
55 C
25 C
125 C
V
GS
Gate-Source Voltage (V)
V
GS(off)
= 1.5 V
V
DS
=
15 V
V
GS(off)
= 3 V
V
DS
=
15 V
V
GS(off)
= 1.5 V
V
=
15 V
f = 1 kHz
V
GS(off)
= 3 V
V
=
15 V
f = 1 kHz
1 mA
0.1 mA
r
D
g
f
g
f
相關(guān)PDF資料
PDF描述
SST5461 P-Channel JFETs
SST5462 P-Channel JFETs
SST5484 MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
SST5485 N-Channel JFETs
SST5486 MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
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