參數資料
型號: SST5460
廠商: Vishay Intertechnology,Inc.
英文描述: MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.2A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.024R; SMD:1; Charge, gate
中文描述: P溝道JFET的
文件頁數: 3/5頁
文件大?。?/td> 50K
代理商: SST5460
2N/SST5460 Series
Vishay Siliconix
Document Number: 70262
S-04030
Rev. D, 04-Jun-01
www.vishay.com
9-3
20
0
2
4
6
8
10
16
12
8
4
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
V
GS(off)
Gate-Source Cutoff Voltage (V)
g
fs
@ V
DS
=
15 V, V
GS
= 0 V
I
@ V
DS
=
15 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
5
0
2.5
1000
0
2
4
6
8
10
800
600
400
200
0
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
V
GS(off)
Gate-Source Cutoff Voltage (V)
r
DS
@ I
D
=
100 mA, V
GS
= 0 V
g
@ V
DS
=
15 V, V
GS
= 0 V
f = 1 kHz
r
DS
g
os
100
80
60
40
20
0
2
0
4
8
12
16
20
1.6
1.2
0.8
0.4
0
Output Characteristics
V
DS
Drain-Source Voltage (V)
I
0.2 V
0.4 V
0.6 V
0.8 V
1.0 V
V
GS
= 0 V
V
GS(off)
= 1.5 V
0.5
0
0.2
0.4
0.6
0.8
1
0.4
0.3
0.2
0.1
0
Output Characteristics
V
DS
Drain-Source Voltage (V)
I
0.4 V
0.6 V
0.8 V
1.0 V
1.2 V
V
GS
= 0 V
10
0
4
8
12
16
20
8
6
4
2
0
Output Characteristics
V
DS
Drain-Source Voltage (V)
I
V
GS
= 0 V
0.5 V
2.0 V
1.0 V
1.5 V
V
GS(off)
= 3 V
2
0
0.2
0.4
0.6
0.8
1
1.6
1.2
0.8
0.4
0
Output Characteristics
V
DS
Drain-Source Voltage (V)
I
V
GS
= 0 V
0.5 V
2.0 V
2.5 V
1.0 V
1.5 V
V
GS(off)
= 3 V
V
GS(off)
= 1.5 V
0.2 V
S
g
I
D
g
f
r
D
相關PDF資料
PDF描述
SST5461 P-Channel JFETs
SST5462 P-Channel JFETs
SST5484 MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
SST5485 N-Channel JFETs
SST5486 MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
相關代理商/技術參數
參數描述
SST5460-E3 功能描述:JFET 55V 1mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
SST5460-T1 功能描述:JFET 55V 1mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
SST5460-T1-E3 功能描述:JFET 55V 1mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
SST5461 功能描述:JFET 55V 2mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
SST5461-E3 功能描述:JFET 55V 2mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel