參數(shù)資料
型號(hào)： SST34HF1621-90-4E-LFP
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： 存儲(chǔ)器
英文描述： 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA56
封裝： 8 X 10 MM, LFBGA-56
文件頁(yè)數(shù)： 5/32頁(yè)
文件大?。?/td> 486K
代理商： SST34HF1621-90-4E-LFP
Data Sheet
16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
SST34HF1621 / SST34HF1641
5
2001 Silicon Storage Technology, Inc.
S71172-05-000
10/01 523
Product Identification Mode Exit/
CFI Mode Exit
In order to return to the standard Read mode, the Software
Product Identification mode must be exited. Exit is accom-
plished by issuing the Software ID Exit command
sequence, which returns the device to the Read mode.
This command may also be used to reset the device to the
Read mode after any inadvertent transient condition that
apparently causes the device to behave abnormally, e.g.,
not read correctly. Please note that the Software ID Exit/
CFI Exit command is ignored during an internal Program or
Erase operation. See Table 4 for software command
codes, Figure 16 for timing waveform and Figure 23 for a
flowchart.
SRAM Operation
With BES1# low, BES2 and BEF# high, the
SST34HF162x operates as 256K x8 or 128K x16 CMOS
SRAM, and the SST34HF164x operates as 512K x8 or
256K x16 CMOS SRAM, with fully static operation requir-
ing no external clocks or timing strobes. The CIOs pin
configures the SRAM for x8 or x16 SRAM operation
modes. The SST34HF162x SRAM is mapped into the
first 256 KByte/128 KWord address space of the device,
and the SST34HF164x SRAM is mapped into the first
512 KByte/256 KWord address space. When BES1#,
BEF# are high and BES2 is low, all memory banks are
deselected and the device enters standby. Read and
Write cycle times are equal. The control signals UBS#
and LBS# provide access to the upper data byte and
lower data byte. See Table 3 for SRAM Read and Write
data byte control modes of operation.
SRAM Read
The SRAM Read operation of the SST34HF1621/1641 is
controlled by OE# and BES1#, both have to be low with
WE# and BES2 high for the system to obtain data from the
outputs. BES1# and BES2 are used for SRAM bank selec-
tion. OE# is the output control and is used to gate data from
the output pins. The data bus is in high impedance state
when OE# is high. Refer to the Read cycle timing diagram,
Figure 3, for further details.
SRAM Write
The SRAM Write operation of the SST34HF1621/1641 is
controlled by WE# and BES1#, both have to be low, BES2
have to be high for the system to write to the SRAM. During
the Word-Write operation, the addresses and data are ref-
erenced to the rising edge of either BES1#, WE#, or the
falling edge of BES2 whichever occurs first. The write time
is measured from the last falling edge of BES#1 or WE# or
the rising edge of BES2 to the first rising edge of BES1#, or
WE# or the falling edge of BES2. Refer to the Write cycle
timing diagram, Figures 4 and 5, for further details.
523 ILL B1.1
SuperFlash Memory
(Bank 1)
I/O Buffers
SuperFlash Memory
(Bank 2)
2 Mbit or 4 Mbit
SRAM
AMS - A0
DQ15 - DQ8
DQ7 - DQ0
AMS = Most significant address
WP#
SA
LBS#
UBS#
WE#
OE#
BES1#
BES2
CIOs
RY/BY#
Control
Logic
BEF#
Address
Buffers
Address
Buffers
F
UNCTIONAL
B
LOCK
D
IAGRAM
相關(guān)PDF資料
PDF描述
SST34HF1641 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
SST34HF1641-70-4C-LFP 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
SST34HF1641-70-4E-L1P 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
SST34HF1641-70-4E-LFP 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
SST34HF1641-90-4C-LFP 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST34HF1621A-70-4C-LFP 功能描述:閃存 16M FLASH 2M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST34HF1621A-70-4C-LFPE 功能描述:閃存 16M FLASH 2M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST34HF1621A-70-4E-LFP 功能描述:閃存 16M FLASH 2M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST34HF1621A-70-4E-LFPE 功能描述:閃存 16M FLASH 2M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST34HF1621C 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory
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