參數(shù)資料
型號: SST29VE010-200-3I-N
廠商: Silicon Storage Technology, Inc.
英文描述: 1 Megabit (128K x 8) Page Mode EEPROM
中文描述: 1兆位(128K的× 8)頁模式的EEPROM
文件頁數(shù): 4/27頁
文件大?。?/td> 900K
代理商: SST29VE010-200-3I-N
4
1998 Silicon Storage Technology, Inc.
304-04 12/97
1 Megabit Page Mode EEPROM
SST29EE010, SST29LE010, SST29VE010
F
UNCTIONAL
B
LOCK
D
IAGRAM
OF
SST 29EE010/29LE010/29VE010
304 MSW B1.0
Single power supply reprogrammable nonvolatile
memories may be unintentionally altered. SST strongly
recommends that Software Data Protection (SDP) al-
ways be enabled. The 29EE010/29LE010/29VE010
should be programmed using the SDP command se-
quence. SST recommends the SDP Disable Command
Sequence not be issued to the device prior to writing.
Please refer to the following Application Notes located at
the back of this databook for more information on using
SDP:
Protecting Against Unintentional Writes When Using
Single Power Supply Flash Memories
The Proper Use of JEDEC Standard Software Data
Protection
Product Identification
The product identification mode identifies the device as
the 29EE010/29LE010/29VE010 and manufacturer as
SST. This mode may be accessed by hardware or
software operations. The hardware operation is typically
used by a programmer to identify the correct algorithm
for the 29EE010/29LE010/29VE010. Users may wish to
use the software product identification operation to iden-
tify the part (i.e. using the device code) when using
multiple manufacturers in the same socket. For details,
see Table 3 for hardware operation or Table 4 for
software operation, Figure 10 for the software ID entry
and read timing diagram and Figure 17 for the ID entry
command sequence flowchart. The manufacturer and
device codes are the same for both operations.
Product Identification Mode Exit
In order to return to the standard read mode, the Soft-
ware Product Identification mode must be exited. Exiting
is accomplished by issuing the Software ID Exit (reset)
operation, which returns the device to the read operation.
The Reset operation may also be used to reset the
device to the read mode after an inadvertent transient
condition that apparently causes the device to behave
abnormally, e.g. not read correctly. See Table 4 for
software command codes, Figure 11 for timing wave-
form and Figure 17 for a flowchart.
Control Logic
A
16
- A
0
CE#
OE#
WE#
DQ
7
- DQ
0
1,048,576 Bit
EEPROM
Cell Array
Y-Decoder and Page Latches
I/O Buffers and Data Latches
Address buffer & Latches
X-Decoder
304 PGM T1.1
T
ABLE
1: P
RODUCT
I
DENTIFICATION
T
ABLE
Byte
0000 H
0001 H
0001 H
0001 H
Data
BF H
07 H
08 H
08 H
Manufacturer’s Code
29EE010 Device Code
29LE010 Device Code
29VE010 Device Code
相關(guān)PDF資料
PDF描述
SST29VE010-200-3I-NH 1 Megabit (128K x 8) Page Mode EEPROM
SST29VE010-200-3I-P 1 Megabit (128K x 8) Page Mode EEPROM
SST29VE010-200-3I-PH 1 Megabit (128K x 8) Page Mode EEPROM
SST29VE010-200-3I-U 1 Megabit (128K x 8) Page Mode EEPROM
SST29VE010-200-3I-UH 1 Megabit (128K x 8) Page Mode EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST29VE010-200-4C-EH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-EHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-NH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-NHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-WH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel