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參數(shù)資料
| 型號(hào)： | SST29LE010A |
| 廠商： | Silicon Storage Technology, Inc. |
| 英文描述： | 1 Megabit (128K x 8) Page Mode EEPROM |
| 中文描述： | 1兆位（128K的× 8）頁(yè)模式的EEPROM |
| 文件頁(yè)數(shù)： | 8/26頁(yè) |
| 文件大小： | 273K |
| 代理商： | SST29LE010A |
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8
1999 Silicon Storage Technology, Inc.
303-01 2/99
1 Megabit Page Mode EEPROM
SST29EE010A / SST29LE010A / SST29VE010A
T
ABLE
5: SST29EE010A DC O
PERATING
C
HARACTERISTICS
V
CC
= 5V±10%
Limits
Max
Symbol
I
CC
Parameter
Power Supply Current
Read
Min
Units
Test Conditions
CE#=OE#=V
IL,
WE#=V
IH
, all I/Os open,
Address input = V
IL
/V
IH
, at f=1/T
RC
Min.,
V
CC
=V
CC
Max
CE#=WE#=V
IL,
OE#=V
IH,
V
CC
=V
CC
Max.
CE#=OE#=WE#=V
IH,
V
CC
=V
CC
Max.
30
mA
Write
Standby V
CC
Current
(TTL input)
Standby V
CC
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Supervoltage for A
9
Supervoltage Current
for A
9
50
3
mA
mA
I
SB1
I
SB2
50
μA
CE#=OE#=WE#=V
CC
-0.3V.
V
CC
= V
CC
Max.
V
IN
=GND to V
CC
, V
CC
= V
CC
Max.
V
OUT
=GND to V
CC
, V
CC
= V
CC
Max.
V
CC
= V
CC
Min.
V
CC
= V
CC
Max.
I
OL
= 2.1 mA, V
CC
= V
CC
Min.
I
OH
= -400μA, V
CC
= V
CC
Min.
CE# = OE# =V
IL
, WE# = V
IH
CE# = OE# = V
IL
, WE# = V
IH
,
A
9
= V
H
Max.
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
V
H
I
H
1
μA
μA
V
V
V
V
V
μA
10
0.8
2.0
0.4
2.4
11.6
12.4
100
303 PGM T5.1
T
ABLE
6: SST29LE010A/29VE010A DC O
PERATING
C
HARACTERISTICS
V
CC
= 3.0-3.6
FOR
SST29LE010A,
V
CC
= 2.7-3.6
FOR
SST29VE010A
Limits
Max
Symbol
I
CC
Parameter
Power Supply Current
Read
Min
Units
Test Conditions
CE#=OE#=V
IL,
WE#=V
IH
, all I/Os open,
Address input = V
IL
/V
IH
, at f=1/T
RC
Min.,
V
CC
=V
CC
Max
CE#=WE#=V
IL,
OE#=V
IH,
V
CC
=V
CC
Max.
CE#=OE#=WE#=V
IH,
V
CC
=V
CC
Max.
12
mA
Write
Standby V
CC
Current
(TTL input)
Standby V
CC
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Supervoltage for A
9
Supervoltage Current
for A
9
15
1
mA
mA
I
SB1
I
SB2
15
μA
CE#=OE#=WE#=V
CC
-0.3V.
V
CC
= V
CC
Max.
V
IN
=GND to V
CC
, V
CC
= V
CC
Max.
V
OUT
=GND to V
CC
, V
CC
= V
CC
Max.
V
CC
= V
CC
Min.
V
CC
= V
CC
Max.
I
OL
= 100 μA, V
CC
= V
CC
Min.
I
OH
= -100 μA, V
CC
= V
CC
Min.
CE# = OE# =V
IL
IH
CE# = OE# = V
IL
, WE# = V
IH
,
A
9
= V
H
Max.
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
V
H
I
H
1
10
0.8
μA
μA
V
V
V
V
V
μA
2.0
0.4
2.4
11.6
12.4
100
303 PGM T6.1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST29VE010A | 1 Megabit (128K x 8) Page Mode EEPROM |
| SST29LE010 | 1 Mbit (128K x8) Page-Mode EEPROM(1 M(128K x8)按頁(yè)存取模式EEPROM) |
| SST29VE010 | 1 Mbit (128K x8) Page-Mode EEPROM(1 M(128K x8)按頁(yè)存取模式EEPROM) |
| SST29LE512-90-4I-PH | 512 Kbit (64K x8) Page-Mode EEPROM |
| SST29VE512-250-4C-EH | 512 Kbit (64K x8) Page-Mode EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST29LE010A-120-4C-E | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Megabit (128K x 8) Page Mode EEPROM |
| SST29LE010A-120-4C-EH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Megabit (128K x 8) Page Mode EEPROM |
| SST29LE010A-120-4C-N | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Megabit (128K x 8) Page Mode EEPROM |
| SST29LE010A-120-4C-NH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Megabit (128K x 8) Page Mode EEPROM |
| SST29LE010A-120-4C-P | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Megabit (128K x 8) Page Mode EEPROM |
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