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參數(shù)資料
| 型號： | SST25VF010-20-4C-SAE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 1M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 4.90 X 6 MM, LEAD FREE, MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 9/22頁 |
| 文件大?。?/td> | 283K |
| 代理商： | SST25VF010-20-4C-SAE |
Data Sheet
1 Mbit SPI Serial Flash
SST25VF010
9
2003 Silicon Storage Technology, Inc.
S71233-01-000
8/03
Auto Address Increment (AAI) Program
The AAI program instruction allows multiple bytes of data to
be programmed without re-issuing the next sequential
address location. This feature decreases total program-
ming time when the entire memory array is to be pro-
grammed. An AAI program instruction pointing to a
protected memory area will be ignored. The selected
address range must be in the erased state (FFH) when ini-
tiating an AAI program instruction.
Prior to any write operation, the Write-Enable (WREN)
instruction must be executed. The AAI program instruction
is initiated by executing an 8-bit command, AFH, followed
by address bits [A
23
-A
0
]. Following the addresses, the data
is input sequentially from MSB (bit 7) to LSB (bit 0). CE#
must be driven high before the AAI program instruction is
executed. The user must poll the BUSY bit in the software
status register or wait T
BP
for the completion of each inter-
nal self-timed Byte-Program cycle. Once the device com-
pletes programming byte, the next sequential address may
be program, enter the 8-bit command, AFH, followed by the
data to be programmed. When the last desired byte had
been programmed, execute the Write-Disable (WRDI)
instruction, 04H, to terminate AAI. After execution of the
WRDI command, the user must poll the Status register to
ensure the device completes programming. See Figure 6
for AAI programming sequence.
There is no wrap mode during AAI programming; once the
highest unprotected memory address is reached, the
device will exit AAI operation and reset the Write-Enable-
Latch bit (WEL = 0).
FIGURE 6: A
UTO
A
DDRESS
I
NCREMENT
(AAI) P
ROGRAM
S
EQUENCE
CE#
SI
SCK
A[23:16] A[15:8]
A[7:0]
AF
Data Byte 1
AF
Data Byte 2
CE#
SI
SO
SCK
Write Disable (WRDI)
Instruction to terminate
AAI Operation
Read Status Register (RDSR)
Instruction to verify end of
AAI Operation
04
Last Data Byte
AF
05
D
OUT
MODE 3
MODE 0
T
BP
TBP
T
BP
1233 F06.1
0 1 2 3 4 5 6 7 8
32 33 34 35 36 37 38 39
15 16
23 24
31
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0 1
0 1 2 3 4 5 6 7
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
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| SST25VF010-20-4C-SAE-DD02 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Mbit SPI Serial Flash |
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| SST25VF010A-33-4C-QAE | 功能描述:閃存 1M (128K x 8) 33MHz RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST25VF010A-33-4C-QAE-T | 功能描述:閃存 2.7V to 3.6V 1Mbit SPI Serial 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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