參數(shù)資料
型號(hào)： SST25VF010-20-4C-SAE
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： PROM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 1M X 1 SPI BUS SERIAL EEPROM, PDSO8
封裝： 4.90 X 6 MM, LEAD FREE, MS-012AA, SOIC-8
文件頁(yè)數(shù)： 10/22頁(yè)
文件大小： 283K
代理商： SST25VF010-20-4C-SAE
10
Data Sheet
1 Mbit SPI Serial Flash
SST25VF010
2003 Silicon Storage Technology, Inc.
S71233-01-000
8/03
Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4
KByte sector to FFH. A Sector-Erase instruction applied to
a protected memory area will be ignored. Prior to any Write
operation, the Write-Enable (WREN) instruction must be
executed. CE# must remain active low for the duration of
the any command sequence. The Sector-Erase instruction
is initiated by executing an 8-bit command, 20H, followed
by address bits [A
23
-A
0
]. Address bits [A
MS
-A
12
]
(A
MS
= Most Significant address) are used to determine the
sector address (SA
X
), remaining address bits can be V
IL
or
V
IH.
CE# must be driven high before the instruction is exe-
cuted. The user may poll the Busy bit in the software status
register or wait T
SE
for the completion of the internal self-
timed Sector-Erase cycle. See Figure 7 for the Sector-
Erase sequence.
FIGURE 7: S
ECTOR
-E
RASE
S
EQUENCE
Block-Erase
The Block-Erase instruction clears all bits in the selected 32
KByte block to FFH. A Block-Erase instruction applied to a
protected memory area will be ignored. Prior to any Write
operation, the Write-Enable (WREN) instruction must be
executed. CE# must remain active low for the duration of
any command sequence. The Block-Erase instruction is
initiated by executing an 8-bit command, 52H, followed by
address bits [A
23
-A
0
]. Address bits [A
MS
-A
15
] (A
MS
= Most
significant address) are used to determine block address
(BA
X
), remaining address bits can be V
IL
or V
IH
. CE# must
be driven high before the instruction is executed. The user
may poll the Busy bit in the software status register or wait
T
BE
for the completion of the internal self-timed Block-
Erase cycle. See Figure 8 for the Block-Erase sequence.
FIGURE 8: B
LOCK
-E
RASE
S
EQUENCE
CE#
SO
SI
SCK
ADD.
0 1 2 3 4 5 6
7 8
ADD.
ADD.
20
HIGH IMPEDANCE
15 16
23 24
31
MODE 0
MODE 3
1233 F07.1
MSB
MSB
CE#
SO
SI
SCK
ADD.
MSB
0 1 2 3 4 5 6
7 8
ADD.
ADD.
52
HIGH IMPEDANCE
15 16
23 24
31
MODE 0
MODE 3
1233 F08.1
MSB
相關(guān)PDF資料
PDF描述
SST25VF512 4 Mbit Uniform Sector, Serial Flash Memory
SST25VF512-20-4C-QA 4 Mbit Uniform Sector, Serial Flash Memory
SST25VF512-20-4C-QAE 4 Mbit Uniform Sector, Serial Flash Memory
SST25VF512-20-4C-SA 4 Mbit Uniform Sector, Serial Flash Memory
SST27SF512-70 -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST25VF010-20-4C-SAE-DD02 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Mbit SPI Serial Flash
SST25VF010A 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:1 Mbit SPI Serial Flash
SST25VF010A-20-4C-SAE 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:IC SPI FLASH
SST25VF010A-33-4C-QAE 功能描述:閃存 1M (128K x 8) 33MHz RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST25VF010A-33-4C-QAE-T 功能描述:閃存 2.7V to 3.6V 1Mbit SPI Serial 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*