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參數(shù)資料
| 型號： | SST25VF512 |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大小： | 283K |
| 代理商： | SST25VF512 |
2003 Silicon Storage Technology, Inc.
S71233-01-000
1
8/03
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
FEATURES:
Single 2.7-3.6V Read and Write Operations
Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
20 MHz Max Clock Frequency
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
– Active Read Current: 7 mA (typical)
– Standby Current: 8 μA (typical)
Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
Fast Erase and Byte-Program:
– Chip-Erase Time: 70 ms (typical)
– Sector- or Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 14 μs (typical)
Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
End-of-Write Detection
– Software Status
Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
Software Write Protection
– Write protection through Block-Protection bits in
status register
Packages Available
– 8-lead SOIC (4.9mm x 6mm)
– 8-contact WSON
PRODUCT DESCRIPTION
SST’s serial flash family features a four-wire, SPI-com-
patible interface that allows for a low pin-count package
occupying less board space and ultimately lowering total
system costs. SST25VF010 SPI serial flash memory is
manufactured with SST’s proprietary, high performance
CMOS SuperFlash Technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability
and
manufacturability
compared
approaches.
with
alternate
The SST25VF010 device significantly improves perfor-
mance, while lowering power consumption. The total
energy consumed is a function of the applied voltage,
current, and time of application. Since for any given volt-
age range, the SuperFlash technology uses less current
to program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less
than alternative flash memory technologies. The
SST25VF010 device operates with a single 2.7-3.6V
power supply.
The SST25VF010 device is offered in both 8-lead SOIC
and 8-contact WSON packages. See Figure 1 for the pin
assignments.
1 Mbit SPI Serial Flash
SST25VF010
SST25VF0101 Mb Serial Peripheral Interface (SPI) flash memory
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| SST25VF512-20-4C-QAE | 4 Mbit Uniform Sector, Serial Flash Memory |
| SST25VF512-20-4C-SA | 4 Mbit Uniform Sector, Serial Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST25VF512_10 | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:512 Kbit SPI Serial Flash |
| SST25VF512-20-4C-QA | 功能描述:閃存 64K x 8 14 us RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST25VF512-20-4C-QAE | 功能描述:閃存 64K x 8 14 us RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST25VF512-20-4C-SA | 功能描述:閃存 64K X 8 14 us RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST25VF512-20-4C-SAE | 功能描述:閃存 64K X 8 14 us RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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