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參數(shù)資料
| 型號： | SSM3K301T |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon N-Channel MOS Type Power Management Switch Applications |
| 中文描述： | 硅N溝道馬鞍山開關(guān)式電源管理應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 198K |
| 代理商： | SSM3K301T |
SSM3K301T
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K301T
Power Management Switch Applications
High-Speed Switching Applications
1.8 V drive
Low ON-resistance:
R
on
= 110 m
(max) (@V
GS
= 1.8 V)
R
on
= 74 m
(max) (@V
GS
= 2.5 V)
R
on
= 56 m
(max) (@V
GS
= 4.0 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
I
D
I
DP
P
D (Note 1)
±
12
V
DC
Pulse
3.5
7.0
Drain current
A
Drain power dissipation
700
mW
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
Y
fs
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
12 V
V
DS
=
20 V, V
GS
=
0
V
GS
=
±
12 V, V
DS
=
0
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
2.0 A
I
D
=
2.0 A, V
GS
=
4.0 V
I
D
=
1.0 A, V
GS
=
2.5 V
I
D
=
0.5 A, V
GS
=
1.8 V
20
Drain-Source breakdown voltage
12
0.4
V
Drain cutoff current
1
±
1
μ
A
μ
A
Gate leakage current
Gate threshold voltage
1.0
V
Forward transfer admittance
(Note 2)
6
10
S
(Note 2)
44
56
(Note 2)
53
74
Drain-Source ON-resistance
R
DS (ON)
(Note 2)
70
110
m
Ω
Input capacitance
C
iss
C
oss
C
rss
Q
g
320
Output capacitance
62
Reverse transfer capacitance
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
51
pF
Total Gate Charge
4.8
Gate-Source Charge
Q
gs
3.3
Gate-Drain Charge
Q
gd
V
DS
= 10 V, I
DS
= 3.5 A
V
GS
= 4 V
1.5
nC
Turn-on time
t
on
t
off
V
DSF
18
Switching time
Turn-off time
V
DD
=
10 V, I
D
=
2 A,
V
GS
=
0~2.5 V, R
G
=
4.7
Ω
14
0.85
ns
Drain-Source forward voltage
I
D
=
3.5 A, V
GS
=
0 V (Note 2)
1.2
V
Note 2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Unit: mm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| SSM3K303T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
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