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參數(shù)資料
| 型號(hào)： | SSM3K302T |
| 廠商： | Toshiba Corporation |
| 英文描述： | Power Management Switch Applications |
| 中文描述： | 電源管理開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 176K |
| 代理商： | SSM3K302T |
SSM3K302T
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K302T
Power Management Switch Applications
High Speed Switching Applications
1.8 V drive
Low ON-resistance:
R
on
= 131 m
(max) (@V
GS
= 1.8V)
R
on
= 87m
(max) (@V
GS
= 2.5V)
R
on
= 71 m
(max) (@V
GS
= 4.0V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
T
ch
T
stg
30
V
Gate–source voltage
±
12
V
DC
3.0
Drain current
Pulse
6.0
A
Drain power dissipation
700
mW
Channel temperature
150
°
C
°
C
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
55~150
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
Y
fs
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
–12 V
V
DS
=
30 V, V
GS
=
0
V
GS
=
±
12 V, V
DS
=
0
V
DS
=
3 V, I
D
=
1 mA
V
DS
=
3 V, I
D
=
2 A
I
D
=
2.0 A, V
GS
=
4.0 V
I
D
=
1.0 A, V
GS
=
2.5 V
I
D
=
0.5 A, V
GS
=
1.8 V
30
V
Drain–source breakdown voltage
18
V
Drain cutoff current
1
μ
A
μ
A
Gate leakage current
±
1
Gate threshold voltage
0.4
1.0
V
Forward transfer admittance
(Note2)
3.8
7.7
S
(Note2)
52
71
(Note2)
64
87
Drain–source ON-resistance
R
DS (ON)
(Note2)
81
131
m
Ω
Input capacitance
C
iss
270
Output capacitance
C
oss
C
rss
Q
g
56
Reverse transfer capacitance
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
47
pF
Total Gate Charge
4.3
Gate-Source Charge
Q
gs
2.8
Gate-Drain Charge
Q
gd
V
DS
= 15 V, I
DS
= 3.0 A
V
GS
= 4 V
1.5
nC
Turn-on time
t
on
t
off
20
Switching time
Turn-off time
V
DD
=
10 V, I
D
=
2 A,
V
GS
=
0 to 2.5 V, R
G
=
4.7
Ω
31
ns
Drain–source forward voltage
V
DSF
I
D
=
3.0 A, V
GS
=
0 V (Note2)
– 0.85
– 1.2
V
Note2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
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