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參數(shù)資料
| 型號： | SSM3K303T |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 192K |
| 代理商： | SSM3K303T |
SSM3K303T
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K303T
High Speed Switching Applications
4 V drive
Low ON-resistance:
Absolute Maximum Ratings
(Ta = 25°C)
R
on
= 120 m
(max) (@V
GS
= 4V)
R
on
= 83 m
(max) (@V
GS
= 10V)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V
DS
30
V
Gate–source voltage
V
GSS
±
20
V
DC
I
D
2.9
Drain current
Pulse
I
DP
5.8
A
Drain power dissipation
P
D (Note 1)
700
mW
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain–source breakdown voltage
V
(BR) DSS
I
DSS
I
GSS
V
th
Y
fs
I
D
=
1 mA, V
GS
=
0
V
DS
=
30 V, V
GS
=
0
V
GS
=
±
20 V, V
DS
=
0
V
DS
=
5 V, I
D
=
1 mA
V
DS
=
5 V, I
D
=
1.5 A
I
D
=
1.5 A, V
GS
=
10 V
I
D
=
1.0 A, V
GS
=
4 V
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
30
V
Drain cutoff current
1
μ
A
μ
A
Gate leakage current
±
1
Gate threshold voltage
1.1
2.6
V
Forward transfer admittance
(Note2)
2.5
4.9
S
(Note2)
64
83
Drain–source ON-resistance
R
DS (ON)
(Note2)
88
120
m
Ω
Input capacitance
C
iss
C
oss
C
rss
Q
g
180
pF
Output capacitance
100
pF
Reverse transfer capacitance
38
pF
Total Gate Charge
3.3
Gate
Source Charge
Q
gs
1.4
Gate
Drain Charge
Q
gd
V
DS
= 15 V, I
DS
= 2.9 A
V
GS
= 4 V
1.9
nC
Turn-on time
t
on
13
Switching time
Turn-off time
t
off
V
DD
=
10 V, I
D
=
1.5 A,
V
GS
=
0 to 4 V, R
G
=
10
Ω
14
ns
Drain–source forward voltage
V
DSF
I
D
=
2.9 A, V
GS
=
0 V (Note2)
– 0.9
– 1.25
V
Note2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
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