參數(shù)資料
型號(hào)： SSM3K309T
廠商： Toshiba Corporation
英文描述： Power Management Switch Applications
中文描述： 電源管理開關(guān)應(yīng)用
文件頁數(shù)： 1/5頁
文件大小： 233K
代理商： SSM3K309T
SSM3K309T
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K309T
○
Power Management Switch Applications
○
High-Current Switching Applications
1.8V drive
Low on-resistance : R
on
= 47m
(max.) (@V
GS
= 1.8V)
: R
on
= 35m
(max.) (@V
GS
= 2.5V)
: R
on
= 31m
(max.) (@V
GS
= 4.0V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
20
V
Gate–source voltage
±
12
V
DC
4.7
Drain current
Pulse
9.4
A
Drain power dissipation
700
mW
°
C
Channel temperature
150
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
55~150
°
C
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
I
D
=
1 mA, V
GS
=
-12 V
V
DS
=
20 V, V
GS
=
0
V
GS
=
±
12 V, V
DS
=
0
20
Drain–source breakdown voltage
V
(BR) DSX
12
V
Drain cutoff current
I
DSS
1
μ
A
Gate leakage current
I
GSS
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
1 mA
0.35
1.0
V
Forward transfer admittance
|Y
fs
|
V
DS
=
3 V, I
D
=
4.0A (Note2)
I
D
=
4.0 A, V
GS
=
4.0 V (Note2)
I
D
=
3.0 A, V
GS
=
2.5 V (Note2)
I
D
=
1.0 A, V
GS
=
1.8 V (Note2)
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
13
25
S
22
31
25
35
Drain–source ON-resistance
R
DS (ON)
30
47
m
Ω
Input capacitance
C
iss
1020
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
175
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
160
pF
Turn-on time
t
on
23
Switching time
Turn-off time
t
off
V
DSF
V
DD
=
10 V, I
D
=
2A
V
GS
=
0~2.5 V, R
G
=
4.7
Ω
34
ns
Drain–source forward voltage
I
D
=
-4.7 A, V
GS
=
0
(Note2)
-0.85
-1.2
V
Note2: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10mg (typ.)
相關(guān)PDF資料
PDF描述
SSM3K310T High-Speed Switching Applications
SSM3K7002F High-Speed Switching Applications
SSM3K7002FU High Speed Switching Applications
SSM40N03P N CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM4K27CT Switching Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSM3K310T 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications
SSM3K315T 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications
SSM3K315T(T5L,F,T) 功能描述:MOSFET N-Ch FET 3-Pin 4.5V 30V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3K315T(TE85L) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 30V 6A TSM
SSM3K316T 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Fiwld Effect Transistor Silicon N Channel MOS Type
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*