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參數(shù)資料
| 型號： | SSM4K27CT |
| 廠商： | Toshiba Corporation |
| 英文描述： | Switching Applications |
| 中文描述： | 開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 208K |
| 代理商： | SSM4K27CT |
SSM4K27CT
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS
Ⅲ
)
SSM4K27CT
○
Switching Applications
Suitable for high-density mounting due to compact package
Low on-resistance:
R
on
= 205 m
(max) (@V
GS
= 4.0 V)
R
on
= 260 m
(max) (@V
GS
= 2.5 V)
R
on
= 390 m
(max) (@V
GS
= 1.8 V)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
±
12
V
DC
I
D
0.5
Drain current
Pulse
I
DP
1.0
A
Drain power dissipation
P
D
(Note 1)
400
mW
Channel temperature
T
ch
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Marking (top view) Electrode Layout (bottom view) Equivalent Circuit (top view)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
Unit: mm
0
0.8
±
0.05
0.5
0.2
±
0.02
0.05
±
0.04
0
±
0
1
±
0
0
0
±
0
Side view
Top view
CST4
1 :Gate 2:Source
3,4:Drain
-
JEDEC
JEITA
TOSHIBA
2-1M1A
Weight: 1.1 mg (typ.)
1
2
3
4
S
Polarity marking
2
1
4
3
1
2
4
3
1
2
3
4
Gate
Source
Drain
Drain
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|---|---|
| SSM4K27CT(TPL3) | 功能描述:MOSFET Vds=20V Id=500mA 4Pin RoHS:否 制造商:Toshiba 晶體管極性:N-Channel 汲極/源極擊穿電壓:20 V 閘/源擊穿電壓:+/- 12 V 漏極連續(xù)電流:0.5 A 電阻汲極/源極 RDS（導(dǎo)通）: 配置:Single 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ES-6-4 封裝: |
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