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參數(shù)資料
| 型號(hào)： | SIHFR320-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 1643K |
| 代理商： | SIHFR320-E3 |
Document Number: 91362
Revision: 15-Sep-08
www.vishay.com
1
Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Base
metal
Plating
b
1,
b
3
(
b
,
b
2)
c1
(c)
Section B - B and C - C
D
A
c2
A
c
Lead tip
5
5
(Dat
u
m A)
Thermal PAD
E1
4
D1
V
ie
w
A - A
A1
A
C
Seating
plane
C
C
B
B
θ
1
θ
2
B
4
4
4
3
5
L1
L
L3
3 x
b
2
3 x
b
0.010
3
b
4
E
2 x e
C
B
M
A
0.25
0.010
L2
B
A
0.25
A
C
M
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.39
0.086
0.094
D1
5.21
-
0.205
-
A1
0.89
1.14
0.035
0.045
E
6.35
6.73
0.250
0.265
b
0.64
0.89
0.025
0.035
E1
4.32
-
0.170
-
b1
0.65
0.79
0.026
0.031
e
2.29 BSC
2.29 BSC
b2
0.76
1.14
0.030
0.045
L
8.89
9.65
0.350
0.380
b3
0.76
1.04
0.030
0.041
L1
1.91
2.29
0.075
0.090
b4
4.95
5.46
0.195
0.215
L2
0.89
1.27
0.035
0.050
c
0.46
0.61
0.018
0.024
L3
1.14
1.52
0.045
0.060
c1
0.41
0.56
0.016
0.022
θ
1
0'
15'
0'
15'
c2
0.46
0.86
0.018
0.034
θ
2
25'
35'
25'
35'
D
5.97
6.22
0.235
0.245
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
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