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參數(shù)資料
| 型號： | SIHFR320-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 1643K |
| 代理商： | SIHFR320-E3 |
Document Number: 91273
S10-1135-Rev. C, 10-May-10
www.vishay.com
7
IRFR320, IRFU320, SiHFR320, SiHFU320
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg91273
.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤
5 %
Body diode forward drop
Re-applied
voltage
Rever
s
e
recovery
current
Body diode forward
current
V
GS
= 10 V
a
I
S
D
Driver gate drive
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
V
DD
dV/dt controlled by R
Driver
s
ame type a
s
D.U.T.
I
controlled by duty factor “D”
D.U.T. - device under te
s
t
D.U.T.
Circuit layout con
s
ideration
s
Low
s
tray inductance
G
round plane
Low leakage inductance
current tran
s
former
R
g
Note
a. V
GS
= 5 V for logic level device
s
V
DD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIHFR320T | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHFR320T-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHFR320TL | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHFR320TL-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHFR320TR | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
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