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參數(shù)資料
| 型號(hào)： | SIHFR320-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 1643K |
| 代理商： | SIHFR320-E3 |
www.vishay.com
2
Document Number: 91273
S10-1135-Rev. C, 10-May-10
IRFR320, IRFU320, SiHFR320, SiHFU320
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 μs; duty cycle
≤
2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
R
thJA
-
-
110
°C/W
R
thJA
-
-
50
R
thJC
-
-
3.0
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 400 V, V
GS
= 0 V
V
DS
= 320 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
V
DS
= 50 V, I
D
= 1.9 A
400
-
-
V
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Δ
V
DS
/T
J
V
GS(th)
I
GSS
-
0.51
-
V/°C
2.0
-
4.0
V
Gate-Source Leakage
-
-
± 100
nA
Zero Gate Voltage Drain Current
I
DSS
-
-
25
μA
-
-
250
Drain-Source On-State Resistance
R
DS(on)
g
fs
I
D
= 1.9 A
b
-
-
1.8
Ω
Forward Transconductance
1.7
-
-
S
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V,
V
= - 25 V,
f = 1.0 MHz, see fig. 5
-
350
-
pF
Output Capacitance
-
120
-
Reverse Transfer Capacitance
-
47
-
Total Gate Charge
V
GS
= 10 V
I
D
= 3.3 A, V
DS
= 320 V,
see fig. 6 and 13
b
-
-
20
nC
Gate-Source Charge
-
-
3.3
Gate-Drain Charge
-
-
11
Turn-On Delay Time
V
DD
= 200 V, I
D
= 3.3 A,
R
g
= 18
Ω
, R
D
= 56
Ω
, see fig. 10
b
-
10
-
ns
Rise Time
-
14
-
Turn-Off Delay Time
-
30
-
Fall Time
-
13
-
Internal Drain Inductance
L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-
4.5
-
nH
Internal Source Inductance
L
S
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
-
-
3.1
A
Pulsed Diode Forward Current
a
I
SM
-
-
12
Body Diode Voltage
V
SD
t
rr
Q
rr
t
on
T
J
= 25 °C, I
S
= 3.1 A, V
GS
= 0 V
b
-
-
1.6
V
Body Diode Reverse Recovery Time
T
J
= 25 °C, I
F
= 3.3 A, dI/dt = 100 A/μs
b
-
270
600
ns
Body Diode Reverse Recovery Charge
-
1.4
3.0
μC
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
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