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參數(shù)資料
| 型號(hào)： | SIHFP260-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 46 A, 200 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 8/9頁(yè) |
| 文件大小： | 1762K |
| 代理商： | SIHFP260-E3 |
Document Number: 91360
Revision: 15-Sep-08
www.vishay.com
1
Package Information
Vishay Siliconix
TO-247AC (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
0.10
A
C
M
M
E
E/2
(2)
(4)
3
B
2 x R
S
D
See
v
ie
w
B
2 x e
b
4
3 x
b
2 x
b
2
L
C
5
1
2
3
Q
D
A
A2
A
A
A1
C
k
B
D
M
M
A
7
(Dat
u
m B)
P1
D1
4
E1
0.01
B
D
M
M
V
ie
w
A - A
Thermal pad
D2
D DE
E
C
C
V
ie
w
B
(
b
1,
b
3,
b
5)
Base metal
c1
(
b
,
b
2,
b
4)
Section C - C, D - D, E - E
(c)
Planting
4
5
5
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
D2
0.51
1.30
0.020
0.051
A1
2.21
2.59
0.087
0.102
E
15.29
15.87
0.602
0.625
A2
1.50
2.49
0.059
0.098
E1
13.72
-
0.540
-
b
0.99
1.40
0.039
0.055
e
5.46 BSC
0.215 BSC
b1
0.99
1.35
0.039
0.053
k
0.254
0.010
b2
1.65
2.39
0.065
0.094
L
14.20
16.10
0.559
0.634
b3
1.65
2.37
0.065
0.093
L1
3.71
4.29
0.146
0.169
b4
2.59
3.43
0.102
0.135
N
7.62 BSC
0.300 BSC
b5
2.59
3.38
0.102
0.133
P
3.56
3.66
0.140
0.144
c
0.38
0.86
0.015
0.034
P1
-
7.39
-
0.291
c1
0.38
0.76
0.015
0.030
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
S
5.51 BSC
0.217 BSC
ECN: S-81920-Rev. A, 15-Sep-08
DWG: 5971
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