參數(shù)資料
型號(hào): SIHF640STR-E3
廠商: VISHAY SILICONIX
元件分類: JFETs
英文描述: 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT, TO-263, D2PAK-3
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 170K
代理商: SIHF640STR-E3
www.vishay.com
4
Document Number: 91037
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
3000
2500
2000
1500
0
500
1000
10
0
10
1
C
V
DS,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91037_05
Q
G
, Total Gate Charge (nC)
V
G
,
20
16
12
8
0
4
0
15
75
60
45
30
V
DS
= 40 V
V
DS
= 100 V
For test circuit
see figure 13
V
DS
= 160 V
91037_06
I
D
= 18 A
10
1
10
0
V
SD
, Source-to-Drain Voltage (V)
I
S
,
0.50
1.30
1.10
0.90
0.70
25
°
C
150
°
C
V
GS
= 0 V
91037_07
1.50
10
μs
100
μs
1
ms
10
ms
Operation in this area limited
by R
DS(on)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
T
C
= 25
°
C
T
= 150
°
C
Single Pulse
10
2
0.1
2
5
0.1
2
5
1
2
5
10
2
5
2
5
1
2
5
10
2
5
10
2
2
5
10
3
91037_08
10
3
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