參數(shù)資料
型號(hào): SI9953DY
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: Dual P-Channel 20-V (D-S) MOSFET
中文描述: 雙P溝道20 - V(下局副局長(zhǎng))MOSFET的
文件頁數(shù): 3/4頁
文件大?。?/td> 48K
代理商: SI9953DY
Si9953DY
Vishay Siliconix
Document Number: 70138
S-00652—Rev. K, 27-Mar-00
www.vishay.com FaxBack 408-970-5600
3
0
2
4
6
8
10
0
2
4
6
8
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
– Drain-to-Source Voltage (V)
I
D
V
GS
– Gate-to-Source Voltage (V)
I
D
Q
g
– Total Gate Charge (nC)
V
DS
– Drain-to-Source Voltage (V)
C
V
G
r
D
I
D
– Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
– Junction Temperature ( C)
(
r
D
0
3
6
9
12
15
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
–50
–25
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
0
100
200
300
400
500
600
700
0
5
10
15
20
0
2
4
6
8
10
0
1
2
3
4
5
6
7
T
C
= –55 C
V
GS
= 10 V
C
rss
C
oss
C
iss
V
GS
= 4.5 V
125 C
V
DS
=10 V
I
D
= 2.3 A
V
GS
= 10 V
I
D
V
GS
= 10 – 7 V
4 V
5 V
6 V
25 C
3 V
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