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參數(shù)資料
| 型號： | SI9953DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 20-V (D-S) MOSFET |
| 中文描述： | 雙P溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 48K |
| 代理商： | SI9953DY |
Si9953DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2
Document Number: 70138
S-00652—Rev. K, 27-Mar-00
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –16 V, V
GS
= 0 V
–2
A
V
DS
= –16 V, V
GS
= 0 V, T
J
= 55 C
–25
On-State Drain Current
b
I
D(on)
V
DS
–5 V, V
GS
= –10 V
–10
A
V
DS
–5 V, V
GS
= –4.5 V
–1.5
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= –10 V, I
D
= 1 A
0.12
0.25
V
GS
= –4.5 V, I
D
= 0.5 A
0.22
0.40
Forward Transconductance
b
g
fs
V
DS
= –15 V, I
D
= –2.3 A
2.5
S
Diode Forward Voltage
b
V
SD
I
S
= –1.7 A, V
GS
= 0 V
–0.8
–1.2
V
Dynamic
a
Total Gate Charge
Q
g
V
DS
= –10 V V
V
GS
= –10 V, I
D
= –2.3 A
10 V I
2 3 A
6.7
25
Gate-Source Charge
Q
gs
1.3
nC
Gate-Drain Charge
Q
gd
1.6
Turn-On Delay Time
t
d(on)
V
= –10 ,
= 10
1 A V
–1 A, V
GEN
= –10 V, R
G
= 6
10
40
Rise Time
t
r
I
D
10 V R
12
40
Turn-Off Delay Time
t
d(off)
20
90
ns
Fall Time
t
f
10
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ s
70
100
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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