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參數(shù)資料
| 型號： | SI9958DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Complementary 20-V (D-S) MOSFET |
| 中文描述： | 補(bǔ)充20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 96K |
| 代理商： | SI9958DY |
Si9958DY
Vishay Siliconix
Document Number: 70141
S-01025—Rev. J, 22-May-00
www.vishay.com FaxBack 408-970-5600
1
Complementary 20-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
N Ch
N-Channel
20
0.10 @ V
GS
= 10 V
0.12 @ V
GS
= 6 V
0.15 @ V
GS
= 4.5 V
0.10 @ V
GS
= –10 V
0.12 @ V
GS
= –6V
0.19 @ V
GS
= –4.5 V
3.5
3
2.5
P Ch
P-Channel
3.5
–20
3
2.5
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
1
D
1
G
1
S
1
S
2
G
2
D
2
D
2
P-Channel MOSFET
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
V
DS
V
GS
20
–20
V
Gate-Source Voltage
20
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
3.5
3.5
A
2.8
2.8
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
14
14
1.7
–1.7
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
2.0
W
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
N- or P-Channel
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
C/W
Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Surface Mounted on FR4 Board, t
10 sec.
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