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參數(shù)資料
| 型號： | SI9928DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Complimentary 20-V (D-S) MOSFET |
| 中文描述： | 免費(fèi)20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 93K |
| 代理商： | SI9928DY |
Si9928DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2
Document Number: 70143
S-00652—Rev. G, 27-Mar-00
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.8
1.2
V
V
DS
= V
GS
, I
D
= –250 A
P-Ch
–0.8
–1.1
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
N-Ch
100
nA
P-Ch
100
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 16 V, V
GS
= 0 V
N-Ch
1
A
V
DS
= – 16 V, V
GS
= 0 V
P-Ch
–1
V
DS
= 10 V, V
GS
= 0 V, T
J
= 70 C
N-Ch
5
V
DS
= –10 V, V
GS
= 0 V, T
J
= 70 C
P-Ch
–5
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
N-Ch
10
A
V
DS
–5 V, V
GS
= –4.5 V
P-Ch
–10
D i S
Drain-Source On-State Resistance
O S
O S
b
V
GS
= 4.5 V, I
D
= 5.0 A
N-Ch
0.041
0.05
V
GS
= –4.5 V, I
D
= –3.2 A
P-Ch
0.087
0.11
r
DS(on)
V
GS
= 3.0
V, I
D
= 3.9 A
N-Ch
0.052
0.06
V
GS
= –
3.0
V, I
D
= –2.0 A
P-Ch
0.120
0.15
V
GS
= 2.7 V, I
D
= 1.0 A
N-Ch
0.060
0.08
V
GS
= –2.7 V, I
D
= –1.0 A
P-Ch
0.135
0.19
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 5.0 A
N-Ch
13
S
V
DS
= –9 V, I
D
= –3.2 A
P-Ch
8
Diode Forward Voltage
b
V
SD
I
S
= 5.0 A, V
GS
= 0 V
N-Ch
0.9
1.2
V
I
S
= –2.0 A, V
GS
= 0 V
P-Ch
–0.9
–1.2
Dynamic
a
Total Gate Charge
Q
g
N Ch
N-Channel
N-Ch
10
20
= 6 V V
= 4 5 V I
= 5 0 A
V
DS
= 6 V,
GS
= 4.5 V, I
D
= 5.0 A
P-Channel
V
DS
= –6 V,
V
GS
= –4.5 V, I
D
= –3.2 A
P-Ch
8
20
Gate-Source Charge
Q
gs
N-Ch
2.6
nC
P-Ch
1.6
Gate-Drain Charge
Q
gd
N-Ch
3.7
P-Ch
3.5
Turn-On Delay Time
t
d(on)
N Ch
N-Channel
V
= 6 V, R
= 6
1 A V
= 4 5 V R
1 A, V
GEN
= 4.5 V, R
G
= 6
P-Channel
V
= –6 V, R
= 6
–1 A V
= –4 5 V R
–1 A, V
GEN
= –4.5 V, R
G
= 6
l
N-Ch
13
30
P-Ch
22
40
Rise Time
t
r
I
D
N-Ch
9
40
P-Ch
43
80
Turn-Off Delay Time
t
d(off)
I
D
N-Ch
30
60
ns
P-Ch
35
70
Fall Time
t
f
N-Ch
9
30
P-Ch
20
40
Source-Drain Reverse Recovery Time
t
rr
I
F
= 5.0 A, di/dt = 100 A/ s
N-Ch
100
150
I
F
= –2.0 A, di/dt = 100 A/ s
P-Ch
75
100
Notes
a.
b.
For design aid only; not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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